4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

• URL: http://arxiv.org/abs/2105.04832v4
• Date: Mon, 8 Nov 2021 22:39:06 GMT
• Title: 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Authors: Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera
• Abstract summary: We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit. This arrangement allows observing Coulomb diamonds at 4.2,K under nearly best matching condition and optimal signal-to-noise ratio.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi-qubit platforms.

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