Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

• URL: http://arxiv.org/abs/2112.10211v1
• Date: Sun, 19 Dec 2021 18:01:57 GMT
• Title: Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
• Authors: Harpreet Singh, Mario Alex Hollberg, Andrei N. Anisimov, Pavel G. Baranov and Dieter Suter
• Abstract summary: Fast quantum gates are an essential requirement for quantum information processing. This work focuses on multi-photon transitions of negatively charged silicon vacancies driven by a strong RF field. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time.
• Score: 0.6719751155411073
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are in the range of a few MHz, the same order of magnitude as the Rabi frequencies of typical control fields. As a consequence, the rotating wave approximation becomes invalid and nonlinear processes like the absorption and emission of multiple photons become relevant. This work focuses on multi-photon transitions of negatively charged silicon vacancies driven by a strong RF field. We present continuous-wave optically detected magnetic resonance (ODMR) spectra measured at different RF powers to identify the 1-, 2-, and 3-RF photon transitions of different types of the silicon vacancy in the 6$H$-SIC polytype. Time-resolved experiments of Rabi oscillations and free induction decays of these multiple RF photon transitions were observed for the first time. Apart from zero-field data, we also present spectra in magnetic fields with different strength and orientation with respect to the system's symmetry axis.

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