Josephson Diode Effect in High Mobility InSb Nanoflags
- URL: http://arxiv.org/abs/2207.08772v1
- Date: Mon, 18 Jul 2022 17:26:18 GMT
- Title: Josephson Diode Effect in High Mobility InSb Nanoflags
- Authors: Bianca Turini, Sedighe Salimian, Matteo Carrega, Andrea Iorio, Elia
Strambini, Francesco Giazotto, Valentina Zannier, Lucia Sorba, and Stefan
Heun
- Abstract summary: dissipation-less transport is observed in single ballistic InSb nanoflag Josephson junctions.
Our results establish InSb Josephson diodes as a useful element in superconducting electronics.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: We report evidence of non-reciprocal dissipation-less transport in single
ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit
coupling. Applying an in-plane magnetic field, we observe an inequality in
supercurrent for the two opposite current propagation directions. This
demonstrates that these devices can work as Josephson diodes, with
dissipation-less current flowing in only one direction. For small fields, the
supercurrent asymmetry increases linearly with the external field, then it
saturates as the Zeeman energy becomes relevant, before it finally decreases to
zero at higher fields. We show that the effect is maximum when the in-plane
field is perpendicular to the current vector, which identifies Rashba
spin-orbit coupling as the main symmetry-breaking mechanism. While a variation
in carrier concentration in these high-quality InSb nanoflags does not
significantly influence the diode effect, it is instead strongly suppressed by
an increase in temperature. Our experimental findings are consistent with a
model for ballistic short junctions and show that the diode effect is intrinsic
to this material. Our results establish InSb Josephson diodes as a useful
element in superconducting electronics.
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