Related papers: Properties of donor qubits in ZnO formed by indium ion implantation

Properties of donor qubits in ZnO formed by indium ion implantation

URL: http://arxiv.org/abs/2212.05230v4
Date: Thu, 15 Jun 2023 02:13:11 GMT
Title: Properties of donor qubits in ZnO formed by indium ion implantation
Authors: Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D'Ambrosia, Lasse Vines, Edward S. Bielejec, Kai-Mei C. Fu
Abstract summary: Shallow neutral donors (D$0$) inO have emerged as a promising candidate for solid-state spin qubits. Laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei.
Score: 1.5683292828486044
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.

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