Room temperature optically detected magnetic resonance of single spins in GaN

• URL: http://arxiv.org/abs/2306.12337v1
• Date: Wed, 21 Jun 2023 15:36:09 GMT
• Title: Room temperature optically detected magnetic resonance of single spins in GaN
• Authors: Jialun Luo, Yifei Geng, Farhan Rana, and Gregory D. Fuchs
• Abstract summary: Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature. In this work we report that two distinct defect types exist in GaN based on their ODMR signatures. Because GaN is a mature semiconductor with well-developed electronic technologies already developed, this defect platform is promising for integrated quantum sensing applications.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Optically detected magnetic resonance (ODMR) is an efficient mechanism to readout the spin of solid-state color centers at room temperature, thus enabling spin-based quantum sensors of magnetic field, electric field, and temperature with high sensitivity and broad commercial applicability. The mechanism of room temperature ODMR is based on spin-dependent relaxation between the optically excited states to the ground states, and thus it is an intrinsic property of a defect center. In this work we report that two distinct defect types exist in GaN based on their ODMR signatures. One group has small negative ODMR based on a spin in a metastable state. The second group has large (up to $\sim$30\%) positive ODMR contrast based on ground-state spin. Because GaN is a mature semiconductor with well-developed electronic technologies already developed, this defect platform is promising for integrated quantum sensing applications.

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