Optical Memory in a Microfabricated Rubidium Vapor Cell
- URL: http://arxiv.org/abs/2307.08538v2
- Date: Tue, 19 Dec 2023 14:29:01 GMT
- Title: Optical Memory in a Microfabricated Rubidium Vapor Cell
- Authors: Roberto Mottola, Gianni Buser, Philipp Treutlein
- Abstract summary: We demonstrate a high-bandwidth optical memory using a warm alkali atom ensemble in a microfabricated vapor cell.
We explore a novel ground-state quantum memory scheme in the hyperfine Paschen-Back regime.
For a storage time of 80 ns we measure an end-to-end efficiency of $eta_e2etext80ns = 3.12(17)%$, corresponding to an internal efficiency of $eta_textinttext0ns = 24(3)%$.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Scalability presents a central platform challenge for the components of
current quantum network implementations that can be addressed by
microfabrication techniques. We demonstrate a high-bandwidth optical memory
using a warm alkali atom ensemble in a microfabricated vapor cell compatible
with wafer-scale fabrication. By applying an external tesla-order magnetic
field, we explore a novel ground-state quantum memory scheme in the hyperfine
Paschen-Back regime, where individual optical transitions can be addressed in a
Doppler-broadened medium. Working on the $^{87}$Rb D$_2$ line, where
deterministic quantum dot single-photon sources are available, we demonstrate
bandwidth-matching with hundreds of megahertz broad light pulses keeping such
sources in mind. For a storage time of 80 ns we measure an end-to-end
efficiency of $\eta_{e2e}^{\text{80ns}} = 3.12(17)\%$, corresponding to an
internal efficiency of $\eta_{\text{int}}^{\text{0ns}} = 24(3)\%$, while
achieving a signal-to-noise ratio of $\text{SNR} = 7.9(8)$ with coherent pulses
at the single-photon level.
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