Static IR Drop Prediction with Attention U-Net and Saliency-Based Explainability

• URL: http://arxiv.org/abs/2408.03292v1
• Date: Tue, 6 Aug 2024 16:41:33 GMT
• Title: Static IR Drop Prediction with Attention U-Net and Saliency-Based Explainability
• Authors: Lizi Zhang, Azadeh Davoodi,
• Abstract summary: We propose a U-Net neural network model with attention gates which is specifically tailored to achieve fast and accurate image-based static IR drop prediction. We show the number of high IR drop pixels can be reduced on-average by 18% by mimicking upsize of a tiny portion of PDN's resistive edges.
• Score: 0.34530027457862006
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: There has been significant recent progress to reduce the computational effort of static IR drop analysis using neural networks, and modeling as an image-to-image translation task. A crucial issue is the lack of sufficient data from real industry designs to train these networks. Additionally, there is no methodology to explain a high-drop pixel in a predicted IR drop image to its specific root-causes. In this work, we first propose a U-Net neural network model with attention gates which is specifically tailored to achieve fast and accurate image-based static IR drop prediction. Attention gates allow selective emphasis on relevant parts of the input data without supervision which is desired because of the often sparse nature of the IR drop map. We propose a two-phase training process which utilizes a mix of artificially-generated data and a limited number of points from real designs. The results are, on-average, 18% (53%) better in MAE and 14% (113%) in F1 score compared to the winner of the ICCAD 2023 contest (and U-Net only) when tested on real designs. Second, we propose a fast method using saliency maps which can explain a predicted IR drop in terms of specific input pixels contributing the most to a drop. In our experiments, we show the number of high IR drop pixels can be reduced on-average by 18% by mimicking upsize of a tiny portion of PDN's resistive edges.

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