Angstrom-scale ion-beam engineering of ultrathin buried oxides for quantum and neuro-inspired computing
- URL: http://arxiv.org/abs/2408.10138v2
- Date: Wed, 21 Aug 2024 11:58:38 GMT
- Title: Angstrom-scale ion-beam engineering of ultrathin buried oxides for quantum and neuro-inspired computing
- Authors: N. Smirnov, E. Krivko, D. Moskaleva, D. Moskalev, A. Solovieva, V. Echeistov, E. Zikiy, N. Korshakov, A. Ivanov, E. Malevannaya, A. Matanin, V. Polozov, M. Teleganov, N. Zhitkov, R. Romashkin, I. Korobenko, A. Yanilkin, A. Lebedev, I. Ryzhikov, A. Andriyash, I. Rodionov,
- Abstract summary: Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing.
Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides engineering with angstrom-scale thickness control.
Our molecular dynamics simulations of Ne+ irradiation on Al/a-AlOx/Al structure confirms the pivotal role of ion generated crystal defects.
- Score: 0.0
- License: http://creativecommons.org/licenses/by-nc-nd/4.0/
- Abstract: Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides engineering with angstrom-scale thickness control. Our molecular dynamics simulations of Ne+ irradiation on Al/a-AlOx/Al structure confirms the pivotal role of ion generated crystal defects. We experimentally demonstrate its performance on Josephson junction tunning in the resistance range of 2 to 37% with a standard deviation of 0.86% across 25x25 mm chip. Moreover, we showcase +-17 MHz frequency control (+-0.172 A tunnel barrier thickness) for superconducting transmon qubits with coherence times up to 500 us, which is promising for useful fault-tolerant quantum computing. This work ensures ultrathin multilayer nanosystems engineering at the ultimate scale by depth-controlled crystal defects generation.
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