Engineering high-Q superconducting tantalum microwave coplanar waveguide resonators for compact coherent quantum circuits

• URL: http://arxiv.org/abs/2412.16099v1
• Date: Fri, 20 Dec 2024 17:41:59 GMT
• Title: Engineering high-Q superconducting tantalum microwave coplanar waveguide resonators for compact coherent quantum circuits
• Authors: Shima Poorgholam-Khanjari, Valentino Seferai, Paniz Foshat, Calum Rose, Hua Feng, Robert H. Hadfield, Martin Weides, Kaveh Delfanazari,
• Abstract summary: Tantalum (Ta) has received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb) We demonstrate the fabrication of thickness-dependent high quality factor (high-Q_i) Ta superconducting microwave coplanar waveguide resonators.
• Score: 0.301138495170623
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• Abstract: Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here, we demonstrate the fabrication engineering of thickness-dependent high quality factor (high-Q_i) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to ensure a body-centred cubic lattice ({\alpha}-Ta) formation. We further engineer the kinetic inductance (L_K) resonators by varying Ta film thicknesses. High L_K is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor Q_i of ~ 3.6 * 10^6 is achieved at the high power regime for 100 nm Ta, while the highest kinetic inductance is obtained to be 0.6 pH/sq for the thinnest film, which is 40 nm. This combination of high Q_i and high L_K highlights the potential of Ta microwave circuits for high-fidelity operations of compact quantum circuits.

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