Strained Donor-Bound Excitons in $^{28}$Si

• URL: http://arxiv.org/abs/2510.09252v1
• Date: Fri, 10 Oct 2025 10:45:40 GMT
• Title: Strained Donor-Bound Excitons in $^{28}$Si
• Abstract summary: We study the neutral donor to donor-bound exciton transition (D$0$$rightarrow,$D$0$X) in isotopically enriched $28$Si.<n>The uniaxial electron deformation potential $Xi_mathrmu$ is found to be significantly larger than values reported for other states or transitions in silicon.<n>Our results provide a refined parameter set critical for the design of silicon quantum devices based on D$0$X transitions.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D$^0$$\rightarrow\,$D$^0$X) in isotopically enriched $^{28}$Si, focusing on the group-V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential $\Xi_\mathrm{u}$ is found to be significantly larger than values reported for other states or transitions in silicon and shows a clear dependence on the donor species, indicating an increased sensitivity of the D$^0$X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential $d$, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D$^0$X transitions.

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