Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon

• URL: http://arxiv.org/abs/2608.29785v2
• Date: Tue, 01 Sep 2026 12:57:32 GMT
• Title: Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon
• Abstract summary: We show a symmetry-based theory of spin-orbit-valley coupling in silicon.<n>We derive the symmetry-allowed spin-valley couplings generated by magnetic-field gradients.<n>These results establish valley symmetry as a fundamental ingredient in the spin-orbit physics of silicon.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or external electric fields. Treating the valley degree of freedom as a symmetry-carrying quantum degree of freedom, we show that the Dresselhaus interaction is necessarily valley off-diagonal and that a bulk contribution proportional to the valley Pauli matrix $τ_1$ is symmetry allowed. Tight-binding calculations yield a bulk coupling more than an order of magnitude larger than typical interface-induced spin-orbit coupling; achieving the same energy scale through the interface-induced mechanism would require electric fields roughly 50 times larger than typical fields. We further derive the symmetry-allowed spin-valley couplings generated by magnetic-field gradients and show how they account for the valley-dependent Zeeman splitting observed in micromagnet experiments. A slight tilt of the background magnetic field out of the plane produces an additional isotropic contribution linear in $B_z$, providing an experimentally accessible signature of the corresponding coupling constant. Finally, we predict a spin-independent micromagnet-induced valley splitting in the $τ_3$ channel, which is distinct from the $τ_{1,2}$ channels generated by alloy disorder and therefore remains robust against disorder-induced cancellation. These results establish valley symmetry as a fundamental ingredient in the spin-orbit physics of silicon and provide new mechanisms for controlling and probing spin and valley degrees of freedom in silicon quantum devices.

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