Simulated coherent electron shuttling in silicon quantum dots
- URL: http://arxiv.org/abs/2003.08018v3
- Date: Tue, 29 Dec 2020 17:21:43 GMT
- Title: Simulated coherent electron shuttling in silicon quantum dots
- Authors: Brandon Buonacorsi, Benjamin Shaw and Jonathan Baugh
- Abstract summary: Gate-defined silicon quantum dots are numerically simulated.
Coherent spin transport is simulated by including spin-orbit and valley terms in an effective Hamiltonian.
Results pertain to proposals for large-scale spin qubit processors in isotopically purified silicon.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Shuttling of single electrons in gate-defined silicon quantum dots is
numerically simulated. A minimal gate geometry without explicit tunnel barrier
gates is introduced, and used to define a chain of accumulation mode quantum
dots, each controlled by a single gate voltage. One-dimensional potentials are
derived from a three-dimensional electrostatic model, and used to construct an
effective Hamiltonian for efficient simulation. Control pulse sequences are
designed by maintaining a fixed adiabaticity, so that different shuttling
conditions can be systematically compared. We first use these tools to optimize
the device geometry for maximum transport velocity, considering only orbital
states and neglecting valley and spin degrees of freedom. Taking realistic
geometrical constraints into account, charge shuttling speeds up to $\sim$300
m/s preserve adiabaticity. Coherent spin transport is simulated by including
spin-orbit and valley terms in an effective Hamiltonian, shuttling one member
of a singlet pair and tracking the entanglement fidelity. With realistic device
and material parameters, shuttle speeds in the range 10-100 m/s with high spin
entanglement fidelities are obtained when the tunneling energy exceeds the
Zeeman energy. High fidelity also requires the inter-dot valley phase
difference to be below a threshold determined by the ratio of tunneling and
Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we
find that the primary source of infidelity is a coherent spin rotation that is
correctable, in principle. The results pertain to proposals for large-scale
spin qubit processors in isotopically purified silicon that rely on coherent
shuttling of spins to rapidly distribute quantum information between
computational nodes.
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