Understanding photoluminescence in semiconductor Bragg-reflection
waveguides: Towards an integrated, GHz-rate telecom photon pair source
- URL: http://arxiv.org/abs/2010.05474v1
- Date: Mon, 12 Oct 2020 06:27:30 GMT
- Title: Understanding photoluminescence in semiconductor Bragg-reflection
waveguides: Towards an integrated, GHz-rate telecom photon pair source
- Authors: Silke Auchter, Alexander Schlager, Hannah Thiel, Kaisa Laiho, Benedikt
Pressl, Holger Suchomel, Martin Kamp, Sven H\"ofling, Christian Schneider and
Gregor Weihs
- Abstract summary: semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials.
We show that devices operating near the long wavelength end of the S-band or the short C-band require temporal filtering shorter than 1 ns.
We predict that shifting the operating wavelengths to the L-band and making small adjustments in the material composition will reduce the amount of photoluminescence to negligible values.
- Score: 47.399953444625154
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$,
KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may
operate at pump wavelengths much closer to the bandgap of the materials. This
is also the case for Bragg-reflection waveguides (BRW) targeting parametric
down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of
the AlGaAs alloy and the strong confinement of the light enable extremely
bright integrated photon pair sources. However, under certain circumstances, a
significant amount of detrimental broadband photoluminescence has been observed
in BRWs. We show that this is mainly a result of linear absorption near the
core and subsequent radiative recombination of electron-hole pairs at deep
impurity levels in the semiconductor. For PDC with BRWs, we conclude that
devices operating near the long wavelength end of the S-band or the short
C-band require temporal filtering shorter than 1 ns. We predict that shifting
the operating wavelengths to the L-band and making small adjustments in the
material composition will reduce the amount of photoluminescence to negligible
values. Such measures enable us to increase the average pump power and/or the
repetition rate, which makes integrated photon pair sources with on-chip
multi-gigahertz pair rates feasible.
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