Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory

• URL: http://arxiv.org/abs/2012.06293v1
• Date: Fri, 11 Dec 2020 12:51:48 GMT
• Title: Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
• Authors: Benjamin Joecker, Andrew D. Baczewski, John K. Gamble, Jarryd J. Pla, Andr\'e Saraiva, Andrea Morello
• Abstract summary: Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. Next stage of development involves demonstrating high-fidelity two-qubit logic gates. We model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory.
• Score: 0.7503129292751939
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.

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