Five-second coherence of a single spin with single-shot readout in silicon carbide

• URL: http://arxiv.org/abs/2110.01590v2
• Date: Tue, 5 Oct 2021 16:02:19 GMT
• Title: Five-second coherence of a single spin with single-shot readout in silicon carbide
• Authors: Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon, Alexandre Bourassa, Yu Jin, Yizhi Zhu, Christian Vorwerk, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom
• Abstract summary: We demonstrate single-shot readout of single defects in silicon carbide (SiC) We achieve over 80% readout fidelity without pre- or post-selection. We report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system.
• Score: 84.97423065534817
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge conversion, whereby the defect's spin state is mapped onto a long-lived charge state. With this technique, we achieve over 80% readout fidelity without pre- or post-selection, resulting in a high signal-to-noise ratio (SNR) that enables us to measure long spin coherence times. Combined with pulsed dynamical decoupling sequences in an isotopically purified host material, we report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system. The mapping of these coherent spin states onto single charges unlocks both single-shot readout for scalable quantum nodes and opportunities for electrical readout via integration with semiconductor devices.

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