Creation of nitrogen-vacancy centers in chemical vapor deposition
diamond for sensing applications
- URL: http://arxiv.org/abs/2111.07981v1
- Date: Mon, 15 Nov 2021 18:47:08 GMT
- Title: Creation of nitrogen-vacancy centers in chemical vapor deposition
diamond for sensing applications
- Authors: T. Luo, L. Lindner, J. Langer, V. Cimalla, F. Hahl, C. Schreyvogel, S.
Onoda, S. Ishii, T. Ohshima, D.Wang, D. A. Simpson, B. C. Johnson, M.
Capelli, R. Blinder, J. Jeske
- Abstract summary: The nitrogen-vacancy center in diamond is a promising quantum system for magnetometry applications.
Key material requirements for NV ensembles are a high NV$-$ concentration, a long spin coherence time and a stable charge state.
This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.
- Score: 0.22723215141187195
- License: http://creativecommons.org/licenses/by-nc-nd/4.0/
- Abstract: The nitrogen-vacancy (NV) center in diamond is a promising quantum system for
magnetometry applications exhibiting optical readout of minute energy shifts in
its spin sub-levels. Key material requirements for NV ensembles are a high
NV$^-$ concentration, a long spin coherence time and a stable charge state.
However, these are interdependent and can be difficult to optimize during
diamond growth and subsequent NV creation. In this work, we systematically
investigate the NV center formation and properties in chemical vapor deposition
(CVD) diamond. The nitrogen flow during growth is varied by over 4 orders of
magnitude, resulting in a broad range of single substitutional nitrogen
concentrations of 0.2-20 parts per million. For a fixed nitrogen concentration,
we optimize electron-irradiation fluences with two different accelerated
electron energies, and we study defect formation via optical characterizations.
We discuss a general approach to determine the optimal irradiation conditions,
for which an enhanced NV concentration and an optimum of NV charge states can
both be satisfied. We achieve spin-spin coherence times T$_2$ ranging from 45.5
to 549 $\mu$s for CVD diamonds containing 168 to 1 parts per billion NV$^-$
centers, respectively. This study shows a pathway to engineer properties of
NV-doped CVD diamonds for improved sensitivity.
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