Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

• URL: http://arxiv.org/abs/2105.09483v2
• Date: Fri, 6 Aug 2021 15:35:03 GMT
• Title: Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond
• Authors: Srivatsa Chakravarthi, Christian Pederson, Zeeshawn Kazi, Andrew Ivanov and Kai-Mei C. Fu
• Abstract summary: quantum network technologies utilize the nitrogen vacancy center in diamond. We create single NV centers by $15$N ion implantation and high-temperature vacuum annealing. Long-term stability of the NV$-$ charge state and emission frequency is demonstrated.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.

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