Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field

• URL: http://arxiv.org/abs/2201.13173v2
• Date: Tue, 1 Feb 2022 09:01:56 GMT
• Title: Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field
• Authors: Amin Hosseinkhani, Guido Burkard
• Abstract summary: We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits. We build on a valley-dependent envelope function theory that enables the analysis of the electron wave function in a silicon quantum dot with an arbitrary roughness at the interface. We assume the presence of single-layer atomic steps at a Si/SiGe interface and study how the presence of a gradient field modifies the spin-mixing mechanisms. We show that our theoretical modeling can quantitatively reproduce results of experimental measurements of qubit relaxation in silicon in the presence of a micromagnet. We further study in detail how a field gradient can modify the EDSR Rabi frequency of a silicon spin qubit. While this strongly depends on the details of the interface roughness, interestingly, we find that adding a micromagnet on top of a spin qubit with an ideal interface can even reduce the EDSR frequency within some interval of the external magnetic field strength.

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