High-precision real-space simulation of electrostatically-confined few-electron states

• URL: http://arxiv.org/abs/2203.00082v1
• Date: Mon, 28 Feb 2022 20:31:29 GMT
• Title: High-precision real-space simulation of electrostatically-confined few-electron states
• Authors: Christopher R. Anderson, Mark F. Gyure, Sam Quinn, Andrew Pan, Richard S. Ross, Andrey A. Kiselev
• Abstract summary: We introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.

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