Related papers: Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

URL: http://arxiv.org/abs/2205.08810v1
Date: Wed, 18 May 2022 09:19:59 GMT
Title: Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation
Authors: Jake Horder, Simon White, Angus Gale, Chi Li, Kenji Watanabe, Takashi Taniguchi, Mehran Kianinia, Igor Aharonovich, Milos Toth
Abstract summary: Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures.
Score: 2.6615104793861537
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures. Over two dozen sites, we observe an ultra-narrow distribution of the zero phonon line at ~436 nm, together with strong linearly polarized emission. We employ resonant excitation to characterize the emission lineshape and find spectral diffusion and phonon broadening contribute to linewidths in the range 1-2 GHz. Rabi oscillations are observed at a range of resonant excitation powers, and under 1 ${\mu}$W excitation a coherent superposition is maintained up to 0.90 ns. Our results are promising for future employment of quantum emitters in hBN for scalable quantum technologies.

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