Neutral silicon vacancy centers in undoped diamond via surface control
- URL: http://arxiv.org/abs/2206.13698v1
- Date: Tue, 28 Jun 2022 02:10:39 GMT
- Title: Neutral silicon vacancy centers in undoped diamond via surface control
- Authors: Zi-Huai Zhang, Josh A. Zuber, Lila V. H. Rodgers, Xin Gui, Paul
Stevenson, Minghao Li, Marietta Batzer, Marcel.li Grimau, Brendan Shields,
Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Robert J. Cava, Patrick
Maletinsky, and Nathalie P. de Leon
- Abstract summary: Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks.
stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material.
We demonstrate an alternative approach via chemical control of the diamond surface.
- Score: 2.034239614097933
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Neutral silicon vacancy centers (SiV0) in diamond are promising candidates
for quantum networks because of their long spin coherence times and stable,
narrow optical transitions. However, stabilizing SiV0 requires high purity,
boron doped diamond, which is not a readily available material. Here, we
demonstrate an alternative approach via chemical control of the diamond
surface. We use low-damage chemical processing and annealing in a hydrogen
environment to realize reversible and highly stable charge state tuning in
undoped diamond. The resulting SiV0 centers display optically detected magnetic
resonance and bulk-like optical properties. Controlling the charge state tuning
via surface termination offers a route for scalable technologies based on SiV0
centers, as well as charge state engineering of other defects.
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