Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

• URL: http://arxiv.org/abs/2012.15018v1
• Date: Wed, 30 Dec 2020 03:14:21 GMT
• Title: Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond
• Authors: Ding Huang, Alex Abulnaga, Sacha Welinski, Mouktik Raha, Jeff D. Thompson, and Nathalie P. de Leon
• Abstract summary: We describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.

Related papers

• Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds [6.576597801995822]
  nitrogen-vacancy (NV) center in diamond has attracted much attention in the fields of quantum sensing, quantum simulation, and quantum networks. In this work, we demonstrate a non-destructive method to fabricate optically coherent NV centers.
  arXiv  Detail & Related papers  (2024-09-26T00:29:34Z)
• Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure [54.501132156894435]
  Tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. We introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223 $mu$s at 4 K.
  arXiv  Detail & Related papers  (2023-07-21T21:40:21Z)
• Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer [0.0]
  Fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier. integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique.
  arXiv  Detail & Related papers  (2022-12-09T05:26:25Z)
• Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers [0.0]
  Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications. We show that SiV0 centers can be efficiently stabilized by photoactivated itinerant carriers. Our results pave the way for on-demand generation of SiV0 centers as well as other emerging quantum defects in diamond.
  arXiv  Detail & Related papers  (2022-09-19T01:58:17Z)
• Hybrid Quantum Nanophotonics: Interfacing Color Center in Nanodiamonds with Si3N4-Photonics [55.41644538483948]
  This chapter covers recent developments in the field of hybrid quantum photonics based on color centers in nanodiamonds and Si3N4-photonics. We believe, that the hybrid approach provides a promising path to realize quantum photonic applications, such as quantum networks or quantum repeaters, in the near future.
  arXiv  Detail & Related papers  (2022-07-26T08:59:48Z)
• Neutral silicon vacancy centers in undoped diamond via surface control [2.034239614097933]
  Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks. stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. We demonstrate an alternative approach via chemical control of the diamond surface.
  arXiv  Detail & Related papers  (2022-06-28T02:10:39Z)
• Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies [48.634695885442504]
  nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.
  arXiv  Detail & Related papers  (2021-09-23T17:18:39Z)
• Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates [51.112488102081734]
  Two-dimensional hexagonal boron nitride (hBN) hosts bright room-temperature single-photon emitters (SPEs) Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip.
  arXiv  Detail & Related papers  (2021-06-28T20:58:02Z)
• Adjoint-optimized nanoscale light extractor for nitrogen-vacancy centers in diamond [0.0]
  nanoscale light extractor (NLE) for efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy centers in bulk diamond. NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface.
  arXiv  Detail & Related papers  (2020-07-09T04:04:49Z)
• Tunable quantum photonics platform based on fiber-cavity enhanced single photon emission from two-dimensional hBN [52.915502553459724]
  In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. We achieve very large cavity-assisted signal enhancement up to 50-fold and equally strong linewidth narrowing owing to cavity funneling. Our work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies.
  arXiv  Detail & Related papers  (2020-06-23T14:20:46Z)
• High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2 [48.7576911714538]
  Integrating quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. Here, we develop an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond.
  arXiv  Detail & Related papers  (2020-04-07T16:43:46Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.