Robust Two-Qubit Gates Using Pulsed Dynamical Decoupling
- URL: http://arxiv.org/abs/2208.00187v2
- Date: Mon, 7 Nov 2022 10:07:52 GMT
- Title: Robust Two-Qubit Gates Using Pulsed Dynamical Decoupling
- Authors: Patrick Barthel, Patrick H. Huber, Jorge Casanova, I\~nigo Arrazola,
Dorna Niroomand, Theeraphot Sriarunothai, Martin B. Plenio, Christof
Wunderlich
- Abstract summary: We present the experimental implementation of a two-qubit phase gate, using a radio frequency (RF) controlled trapped-ion quantum processor.
It allows for a tunable phase shift with high-fidelity results, in particular a fringe contrast up to $99_-2+1%$ is observed in Ramsey-type measurements.
It holds the potential for fast gate speeds (gate times on the order of $100mu$s) by using two axial motional modes of a two-ion crystal.
- Score: 1.0539847330971805
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We present the experimental implementation of a two-qubit phase gate, using a
radio frequency (RF) controlled trapped-ion quantum processor. The RF-driven
gate is generated by a pulsed dynamical decoupling sequence applied to the
ions' carrier transitions only. It allows for a tunable phase shift with
high-fidelity results, in particular a fringe contrast up to $99_{-2}^{+1}\%$
is observed in Ramsey-type measurements. We also prepare a Bell state using
this laser-free gate. The phase gate is robust against common sources of error.
We investigate the effect of the excitation of the center-of-mass (COM) mode,
errors in the axial trap frequency, pulse area errors and errors in sequence
timing. The contrast of the phase gate is not significantly reduced up to a COM
mode excitation $<20$ phonons, trap frequency errors of +10%, and pulse area
errors of -8%. The phase shift is not significantly affected up to $<10$
phonons and pulse area errors of -2%. Both, contrast and phase shift are robust
to timing errors up to -30% and +15%. The gate implementation is resource
efficient, since only a single driving field is required per ion. Furthermore,
it holds the potential for fast gate speeds (gate times on the order of
$100~\mu$s) by using two axial motional modes of a two-ion crystal through
improved setups.
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