Modelling of spin decoherence in a Si hole qubit perturbed by a single
charge fluctuator
- URL: http://arxiv.org/abs/2210.10476v2
- Date: Fri, 31 Mar 2023 19:49:54 GMT
- Title: Modelling of spin decoherence in a Si hole qubit perturbed by a single
charge fluctuator
- Authors: Baker Shalak, Christophe Delerue, Yann-Michel Niquet
- Abstract summary: We simulate a hole spin qubit in a quantum dot defined electrostatically by a set of gates along a silicon nanowire channel.
We show that dephasing time $T$ is well given by a two-level model in a wide range of frequency.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Spin qubits in semiconductor quantum dots are one of the promizing devices to
realize a quantum processor. A better knowledge of the noise sources affecting
the coherence of such a qubit is therefore of prime importance. In this work,
we study the effect of telegraphic noise induced by the fluctuation of a single
electric charge. We simulate as realistically as possible a hole spin qubit in
a quantum dot defined electrostatically by a set of gates along a silicon
nanowire channel. Calculations combining Poisson and time-dependent
Schr\"odinger equations allow to simulate the relaxation and the dephasing of
the hole spin as a function of time for a classical random telegraph signal. We
show that dephasing time $T_2$ is well given by a two-level model in a wide
range of frequency. Remarkably, in the most realistic configuration of a low
frequency fluctuator, the system has a non-Gaussian behavior in which the phase
coherence is lost as soon as the fluctuator has changed state. The Gaussian
description becomes valid only beyond a threshold frequency $\omega_{th}$, when
the two-level system reacts to the statistical distribution of the fluctuator
states. We show that the dephasing time $T_{2}(\omega_{th})$ at this threshold
frequency can be considerably increased by playing on the orientation of the
magnetic field and the gate potentials, by running the qubit along "sweet"
lines. However, $T_{2}(\omega_{th})$ remains bounded due to dephasing induced
by the non-diagonal terms of the stochastic perturbation Hamiltonian. Our
simulations reveal that the spin relaxation cannot be described cleanly in the
two-level model because the coupling to higher energy hole levels impacts very
strongly the spin decoherence. This result suggests that multi-level
simulations including the coupling to phonons should be necessary to describe
the relaxation phenomenon in this type of qubit.
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