Related papers: Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

URL: http://arxiv.org/abs/2212.04670v2
Date: Tue, 13 Dec 2022 22:16:43 GMT
Title: Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Authors: Srivatsa Chakravarthi, Nicholas S. Yama, Alex Abulnaga, Ding Huang, Christian Pederson, Karine Hestroffer, Fariba Hatami, Nathalie P. de Leon, Kai-Mei C. Fu
Abstract summary: Fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier. integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique.
Score: 0.0
License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
Abstract: Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

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