Femtosecond laser induced creation of G and W-centers in
silicon-on-insulator substrates
- URL: http://arxiv.org/abs/2304.03551v1
- Date: Fri, 7 Apr 2023 09:16:09 GMT
- Title: Femtosecond laser induced creation of G and W-centers in
silicon-on-insulator substrates
- Authors: Hugo Quard, Mario Khoury, Andong Wang, Tobias Herzig, Jan Meijer,
Sebastian Pezzagna, S\'ebastien Cueff, David Grojo, Marco Abbarchi, Hai Son
Nguyen, Nicolas Chauvin and Thomas Wood
- Abstract summary: We demonstrate the creation of W and G-centers in commercial silicon on insulator (SOI)
Their quality is comparable to that found for the same emitters obtained with conventional implant processes.
- Score: 2.1308043647418
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: The creation of fluorescent defects in silicon is a key stepping stone
towards assuring the integration perspectives of quantum photonic devices into
existing technologies. Here we demonstrate the creation, by femtosecond laser
annealing, of W and G-centers in commercial silicon on insulator (SOI)
previously implanted with 12C+ ions. Their quality is comparable to that found
for the same emitters obtained with conventional implant processes; as
quantified by the photoluminescence radiative lifetime, the broadening of their
zero-phonon line (ZPL) and the evolution of these quantities with temperature.
In addition to this, we show that both defects can be created without carbon
implantation and that we can erase the G-centers by annealing while enhancing
the W-centers' emission. These demonstrations are relevant to the deterministic
and operando generation of quantum emitters in silicon.
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