Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation

• URL: http://arxiv.org/abs/2401.14631v1
• Date: Fri, 26 Jan 2024 03:50:33 GMT
• Title: Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
• Authors: Alexander Senichev, Zachariah O. Martin, Yongqiang Wang, Owen M. Matthiessen, Alexei Lagutchev, Han Htoon, Alexandra Boltasseva, Vladimir M. Shalaev
• Abstract summary: This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions.
• Score: 70.64959705888512
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation and thermal annealing techniques. Guided by theoretical predictions, we assess the potential of Zr ions to create optically addressable spin-defects and employ Kr ions as an alternative approach that targets lattice defects without inducing chemical doping effects. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The emitter density increases with the ion fluence, and there is an optimal value for the high density of emitters with low AlN background fluorescence. Additionally, under shorter excitation wavelength of 405 nm, Zr-implanted AlN exhibits isolated point-like emitters, which can be related to Zr-based defect complexes. This study provides important insights into the formation and properties of single-photon emitters in aluminum nitride induced by heavy ion implantation, contributing to the advancement of the aluminum nitride platform for on-chip quantum photonic applications.

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