A solid-state source of single and entangled photons at diamond
SiV$^-$-center transitions operating at 80K
- URL: http://arxiv.org/abs/2304.14170v1
- Date: Thu, 27 Apr 2023 13:12:25 GMT
- Title: A solid-state source of single and entangled photons at diamond
SiV$^-$-center transitions operating at 80K
- Authors: Xin Cao (1), Jingzhong Yang (1), Tom Fandrich (1), Yiteng Zhang (1),
Eddy P. Rugeramigabo (1), Benedikt Brechtken (1), Rolf J. Haug (1 and 2),
Michael Zopf (1), Fei Ding (1 and 2)
- Abstract summary: Epitaxially grown quantum dots hold great potential for on-demand generation of single and entangled photons with high purity and indistinguishability.
Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Large-scale quantum networks require the implementation of long-lived quantum
memories as stationary nodes interacting with qubits of light. Epitaxially
grown quantum dots hold great potential for the on-demand generation of single
and entangled photons with high purity and indistinguishability. Coupling these
emitters to memories with long coherence times enables the development of
hybrid nanophotonic devices incorporating the advantages of both systems. Here
we report the first GaAs/AlGaAs quantum dots grown by droplet etching and
nanohole infilling method, emitting single photons with a narrow wavelength
distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of
Silicon-vacancy centers. Polarization entangled photons are generated via the
biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single
photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to
80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system
technologically attractive for real-world quantum photonic applications.
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