Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit

• URL: http://arxiv.org/abs/2304.14846v1
• Date: Fri, 28 Apr 2023 13:35:40 GMT
• Title: Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Authors: He Liu, Ke Wang, Fei Gao, Jin Leng, Yang Liu, Yu-Chen Zhou, Gang Cao, Ting Wang, Jianjun Zhang, Peihao Huang, Hai-Ou Li and Guo-Ping Guo
• Abstract summary: Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. We report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire is electrically tuned through the detuning energy and middle gate voltage.
• Score: 21.090895457025567
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy and middle gate voltage (V_M). f_Rabi gradually decreases with increasing detuning energy; on the contrary, f_Rabi is positively correlated with V_M. We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to f_Rabi. We further demonstrate an ultrafast f_Rabi exceeding 1.2 GHz, which evidences the strong SOI in our device. The discovery of an ultrafast and electrically tunable f_Rabi in a hole spin qubit has potential applications in semiconductor quantum computing.

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