Related papers: High-quality superconducting α-Ta film sputtered on heated silicon substrate

High-quality superconducting α-Ta film sputtered on heated silicon substrate

URL: http://arxiv.org/abs/2305.10957v2
Date: Tue, 7 May 2024 09:59:17 GMT
Title: High-quality superconducting α-Ta film sputtered on heated silicon substrate
Authors: Yanfu Wu, Zengqian Ding, Kanglin Xiong, Jiagui Feng,
Abstract summary: alpha-Ta film is a promising platform for fabricating multi-qubits with long coherence time. Here we report the alpha-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the alpha-Ta film grown at 500 degC are higher than that in the alpha-Ta film grown at room temperature (RT)
Score: 0.0
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Intrigued by the discovery of the long lifetime in the {\alpha}-Ta/Al2O3-based Transmon qubit, researchers recently found {\alpha}-Ta film is a promising platform for fabricating multi-qubits with long coherence time. To meet the requirements for integrating superconducting quantum circuits, the ideal method is to grow {\alpha}-Ta film on a silicon substrate compatible with industrial manufacturing. Here we report the {\alpha}-Ta film sputter-grown on Si (100) with a low-loss superconducting TiNx buffer layer. The {\alpha}-Ta film with a large growth temperature window has a good crystalline character. The superconducting critical transition temperature (Tc) and residual resistivity ratio (RRR) in the {\alpha}-Ta film grown at 500 {\deg}C are higher than that in the {\alpha}-Ta film grown at room temperature (RT). These results provide crucial experimental clues toward understanding the connection between the superconductivity and the materials' properties in the {\alpha}-Ta film and open a new route for producing a high-quality {\alpha}-Ta film on silicon substrate for future industrial superconducting quantum computers.

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