Related papers: Creation of NV centers in diamond under 155 MeV electron irradiation

Creation of NV centers in diamond under 155 MeV electron irradiation

URL: http://arxiv.org/abs/2305.15009v1
Date: Wed, 24 May 2023 10:48:47 GMT
Title: Creation of NV centers in diamond under 155 MeV electron irradiation
Authors: Elena Losero, Valentin Goblot, Yuchun Zhu, Hossein Babashah, Victor Boureau, Florian Burkart, and Christophe Galland
Abstract summary: Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for solid-state sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV.
Score: 0.0
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or electrometers. While nitrogen impurities can be easily incorporated during crystal growth, the creation of vacancies requires further treatment. Electron irradiation and annealing is often chosen in this context, offering advantages with respect to irradiation by heavier particles that negatively affect the crystal lattice structure and consequently the NV- optical and spin properties. A thorough investigation of electron irradiation possibilities is needed to optimize the process and improve the sensitivity of NV-based sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV. We develop a simulation model to estimate the concentration of created vacancies and experimentally demonstrate an increase of NV- concentration by more than 3 orders of magnitude following irradiation of a nitrogen-rich HPHT diamond over a very large sample volume, which translates into an important gain in sensitivity. Moreover, we discuss the impact of electron irradiation in this peculiar regime on other figures of merits relevant for NV sensing, i.e. charge state conversion efficiency and spin relaxation time. Finally, the effect of extremely high energy irradiation is compared with the more conventional low energy irradiation process, employing 200 keV electrons from a transmission electron microscope, for different substrates and irradiation fluences, evidencing sixty-fold higher yield of vacancy creation per electron at 155 MeV.

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