Optical tuning of the diamond Fermi level measured by correlated
scanning probe microscopy and quantum defect spectroscopy
- URL: http://arxiv.org/abs/2309.15969v1
- Date: Wed, 27 Sep 2023 19:41:23 GMT
- Title: Optical tuning of the diamond Fermi level measured by correlated
scanning probe microscopy and quantum defect spectroscopy
- Authors: Christian Pederson, Rajiv Giridharagopal, Fang Zhao, Scott T. Dunham,
Yevgeny Raitses, David S. Ginger and Kai-Mei C. Fu
- Abstract summary: Quantum technologies based on quantum point defects in crystals require control over the defect charge state.
Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring.
- Score: 3.443230114839641
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Quantum technologies based on quantum point defects in crystals require
control over the defect charge state. Here we tune the charge state of shallow
nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a
hydrogenated surface with moderate optical excitation and simultaneous spectral
monitoring. The loss of conductivity and change in work function due to
oxidation are measured in atmosphere using conductive atomic force microscopy
(C-AFM) and Kelvin probe force microscopy (KPFM). We correlate these scanning
probe measurements with optical spectroscopy of the nitrogen-vacancy and
silicon-vacancy centers created via implantation and annealing 15-25 nm beneath
the diamond surface. The observed charge state of the defects as a function of
optical exposure demonstrates that laser oxidation provides a way to precisely
tune the Fermi level over a range of at least 2.00 eV. We also observe a
significantly larger oxidation rate for implanted surfaces compared to
unimplanted surfaces under ambient conditions. Combined with knowledge of the
electron affinity of a surface, these results suggest KPFM is a powerful,
high-spatial resolution technique to advance surface Fermi level engineering
for charge stabilization of quantum defects.
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