Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing

• URL: http://arxiv.org/abs/2310.20540v1
• Date: Tue, 31 Oct 2023 15:21:58 GMT
• Title: Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Authors: E. Nieto Hern\'andez, H.B. Ya\u{g}c{\i}, V. Pugliese, P. Apr\`a, J. K. Cannon, S. G. Bishop, J. Hadden, S. Ditalia Tchernij, Olivero, A.J. Bennett, J. Forneris
• Abstract summary: Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 {\deg}C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state.

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