Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators
- URL: http://arxiv.org/abs/2312.13504v2
- Date: Thu, 16 May 2024 17:25:12 GMT
- Title: Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators
- Authors: Sarang Mittal, Kazemi Adachi, Nicholas E. Frattini, Maxwell D. Urmey, Sheng-Xiang Lin, Alec L. Emser, Cyril Metzger, Luca Talamo, Sarah Dickson, David Carlson, Scott B. Papp, Cindy A. Regal, Konrad W. Lehnert,
- Abstract summary: Microwave-frequency devices rely on silicon nitride (Si$_3$N$_4$) for sensing, signal processing, and quantum communication.
We measure the cryogenic loss of either as-deposited or high-temperature stoichiometric Si$_3$N$_4$ as a function of drive strength and temperature.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric Si$_3$N$_4$ as a function of drive strength and temperature. The internal loss behavior of the electrical resonators is largely consistent with the standard tunneling model of two-level systems (TLS), including damping caused by resonant energy exchange with TLS and by the relaxation of non-resonant TLS. We further supplement the TLS model with a self-heating effect to explain an increase in the loss observed in as-deposited films at large drive powers. Critically, we demonstrate that annealing remedies this anomalous power-induced loss, reduces the relaxation-type damping by more than two orders of magnitude, and reduces the resonant-type damping by a factor of three. Employing infrared absorption spectroscopy, we find that annealing reduces the concentration of hydrogen in the Si$_3$N$_4$, suggesting that hydrogen impurities cause substantial dissipation.
Related papers
- Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature.
We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs.
Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
arXiv Detail & Related papers (2024-05-03T23:02:30Z) - Identification and Mitigation of Conducting Package Losses for Quantum
Superconducting Devices [1.03905835096574]
We present a series of measurements and simulations showing that conducting losses in the packaging of our superconducting resonator devices affect the maximum achievable internal quality factors (Qi)
By utilizing resonators with different widths and gaps, different volumes of the stored electromagnetic energy were sampled thus affecting Qi.
arXiv Detail & Related papers (2023-04-17T21:51:47Z) - Characterization of loss mechanisms in a fluxonium qubit [25.014343643597424]
We characterize a fluxonium qubit with in situ tunability of its Josephson energy at different flux biases and different Josephson energy values.
The relaxation rate at qubit energy values, ranging more than one order of magnitude around the thermal energy $k_B T$, can be quantitatively explained by a combination of dielectric loss and $1/f$ flux noise with a crossover point.
In particular, as increasing Josephson energy thus decreasing qubit frequency at the flux insensitive spot, we find that the qubit exhibits increasingly weaker coupling to TLS defects.
arXiv Detail & Related papers (2023-02-16T06:19:12Z) - Precision measurement of the microwave dielectric loss of sapphire in
the quantum regime with parts-per-billion sensitivity [50.591267188664666]
Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes.
Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of $100$ parts-per-billion.
We have devised a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of $5$ parts per billion.
arXiv Detail & Related papers (2022-06-29T00:14:11Z) - Thermal self-oscillations in monolayer graphene coupled to a
superconducting microwave cavity [58.720142291102135]
We observe thermal self-oscillations in a monolayer graphene flake coupled to superconducting resonator.
The experimental observations fit well with theoretical model based on thermal instability.
The modelling of the oscillation sidebands provides a method to evaluate electron phonon coupling in disordered graphene sample at low energies.
arXiv Detail & Related papers (2022-05-27T15:38:41Z) - Power and temperature dependent model for High Q superconductors [0.0]
Measuring the internal quality factor of coplanar waveguide superconducting resonators is an established method of determining small losses in superconducting devices.
excess non-equilibrium quasiparticles can also limit the quality factor of the planar superconducting resonators used in circuit quantum electrodynamics.
Here a two-temperature, power and temperature dependent model is proposed to evaluate resonator losses for isolating TLS and quasiparticle loss simultaneously.
arXiv Detail & Related papers (2022-05-12T18:10:24Z) - Anomalous Loss Reduction Below Two-Level System Saturation in Aluminum
Superconducting Resonators [0.0]
capacitively-coupled aluminum half-wavelength coplanar waveguide resonators are investigated.
Two-level systems (TLS) become the dominant source of loss in the few-photon and low temperature regime.
arXiv Detail & Related papers (2021-09-24T04:29:21Z) - Measurement of the Low-temperature Loss Tangent of High-resistivity
Silicon with a High Q-factor Superconducting Resonator [58.720142291102135]
We present the direct loss tangent measurement of a high-resist intrinsicivity (100) silicon wafer in the temperature range from 70 mK to 1 K.
The measurement was performed using a technique that takes advantage of a high quality factor superconducting niobium resonator.
arXiv Detail & Related papers (2021-08-19T20:13:07Z) - Quantum Sensors for Microscopic Tunneling Systems [58.720142291102135]
tunneling Two-Level-Systems (TLS) are important for micro-fabricated quantum devices such as superconducting qubits.
We present a method to characterize individual TLS in virtually arbitrary materials deposited as thin-films.
Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects.
arXiv Detail & Related papers (2020-11-29T09:57:50Z) - Loss channels affecting lithium niobate phononic crystal resonators at
cryogenic temperature [1.5478632117921844]
We investigate the performance of microwave-frequency phononic crystal resonators fabricated on thin-film lithium niobate.
For different design geometries at millikelvin temperatures, we achieve mechanical internal quality factors $Q_i$ above $105 - 106$ at high microwave drive power.
We observe an anomalous low-temperature frequency shift consistent with resonant TLS decay and find that material choice can help to mitigate these losses.
arXiv Detail & Related papers (2020-10-02T14:28:55Z) - Effect of phonons on the electron spin resonance absorption spectrum [62.997667081978825]
We model the effect of phonons and temperature on the electron spin resonance (ESR) signal in magnetically active systems.
We find that the suppression of ESR signals is due to phonon broadening but not based on the common assumption of orbital quenching.
arXiv Detail & Related papers (2020-04-22T01:13:07Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.