Envelope-function theory of inhomogeneous strain in semiconductor nanostructures

• URL: http://arxiv.org/abs/2312.15967v2
• Date: Tue, 18 Jun 2024 13:56:36 GMT
• Title: Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Authors: Andrea Secchi, Filippo Troiani,
• Abstract summary: Strain is an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means to improve the properties of devices. Here, we generalize the theory of Bir and Pikus to the case of inhomogeneous strain. By fully accounting for the relativistic effects and metric aspects of the problem, we derive a complete envelope-function Hamiltonian.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Strain represents an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means in order to improve the properties of various devices, including advanced MOSFETs and spin-based qubits. However, its treatment within the envelope function framework is well established only for the homogeneous case, thanks to the theory of Bir and Pikus. Here, we generalize such theory to the case of inhomogeneous strain. By fully accounting for the relativistic effects and metric aspects of the problem, we derive a complete envelope-function Hamiltonian, including the terms that depend on first and second spatial derivatives of the strain tensor.

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