Genuine and faux single G centers in carbon-implanted silicon
- URL: http://arxiv.org/abs/2402.07705v1
- Date: Mon, 12 Feb 2024 15:21:07 GMT
- Title: Genuine and faux single G centers in carbon-implanted silicon
- Authors: Alrik Durand, Yoann Baron, F\'elix Cache, Tobias Herzig, Mario Khoury,
S\'ebastien Pezzagna, Jan Meijer, Jean-Michel Hartmann, Shay Reboh, Marco
Abbarchi, Isabelle Robert-Philip, Jean-Michel G\'erard, Vincent Jacques,
Guillaume Cassabois and Ana\"is Dr\'eau
- Abstract summary: We show that single color centers with a zero-phonon line around $1.28 mu$m are split in two distinct families of point defects.
The remaining defects belong to a new color center, which we will refer to as G$star$ center, whose atomic configuration has yet to be determined.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Among the wide variety of single fluorescent defects investigated in silicon,
numerous studies have focused on color centers with a zero-phonon line around
$1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G
center. However, inconsistent estimates regarding their quantum efficiency cast
doubt on the correct identification of these individual emitters. Through a
comparative analysis of their single-photon emission properties, we demonstrate
that these single color centers are split in two distinct families of point
defects. A first family consists of the genuine single G centers with a
well-identified microscopic structure and whose photoluminescence has been
investigated on ensemble measurements since the 60's. The remaining defects
belong to a new color center, which we will refer to as G$^{\star}$ center,
whose atomic configuration has yet to be determined. These results provide a
safeguard against future defect misidentifications, which is crucial for
further development of quantum technologies relying on G or G$^{\star}$ center
quantum properties.
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