Genuine and faux single G centers in carbon-implanted silicon

• URL: http://arxiv.org/abs/2402.07705v1
• Date: Mon, 12 Feb 2024 15:21:07 GMT
• Title: Genuine and faux single G centers in carbon-implanted silicon
• Authors: Alrik Durand, Yoann Baron, F\'elix Cache, Tobias Herzig, Mario Khoury, S\'ebastien Pezzagna, Jan Meijer, Jean-Michel Hartmann, Shay Reboh, Marco Abbarchi, Isabelle Robert-Philip, Jean-Michel G\'erard, Vincent Jacques, Guillaume Cassabois and Ana\"is Dr\'eau
• Abstract summary: We show that single color centers with a zero-phonon line around $1.28 mu$m are split in two distinct families of point defects. The remaining defects belong to a new color center, which we will refer to as G$star$ center, whose atomic configuration has yet to be determined.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

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