Detection of single W-centers in silicon

• URL: http://arxiv.org/abs/2108.04283v2
• Date: Thu, 28 Apr 2022 14:27:33 GMT
• Title: Detection of single W-centers in silicon
• Authors: Yoann Baron, Alrik Durand, P\'eter Udvarhelyi, Tobias Herzig, Mario Khoury, S\'ebastien Pezzagna, Jan Meijer, Isabelle Robert-Philip, Marco Abbarchi, Jean-Michel Hartmann, Vincent Mazzocchi, Jean-Michel G\'erard, Adam Gali, Vincent Jacques, Guillaume Cassabois and Ana\"is Dr\'eau
• Abstract summary: Single intrinsic defects in silicon are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$mu$m. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

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