Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
- URL: http://arxiv.org/abs/2405.03596v1
- Date: Mon, 6 May 2024 16:05:12 GMT
- Title: Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
- Authors: Efe Cakar, H. Ekmel Ercan, Gordian Fuchs, Artem O. Denisov, Christopher R. Anderson, Mark F. Gyure, Jason R. Petta,
- Abstract summary: We show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes.
We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected.
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- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlapping gate structure combined with an approximate solution to the three-dimensional Schr\"odinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected.
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