Element-specific, non-destructive profiling of layered heterostructures

• URL: http://arxiv.org/abs/2410.00241v2
• Date: Wed, 2 Oct 2024 14:32:39 GMT
• Title: Element-specific, non-destructive profiling of layered heterostructures
• Authors: Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata, Nazareth Ortiz Hernández, Aidan G. McConnell, Maël Clémence, Hiroki Ueda, Procopios C. Constantinou, Kieran Spruce, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Dario Ferreira Sanchez, Daniel Grolimund, Urs Staub, Guy Matmon, Simon Gerber, Gabriel Aeppli,
• Abstract summary: Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. We present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $delta$-layers within silicon.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($\delta$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging. Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $\delta$-layers within silicon, and show that the sub-nm electronic thickness of the $\delta$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.

Related papers

• Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates [49.87501877273686]
  Transition metal dichalcogenide (TMD) single photon emitters offer numerous advantages to quantum information applications. Traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate.
  arXiv  Detail & Related papers  (2024-08-02T07:44:29Z)
• Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots [3.977816506983023]
  Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
  arXiv  Detail & Related papers  (2024-05-25T05:50:00Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Non-destructive X-ray imaging of patterned delta-layer devices in silicon [0.0]
  We exploit X-ray fluorescence to create an element-specific image of As dopants in silicon. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5nm.
  arXiv  Detail & Related papers  (2022-08-19T14:49:54Z)
• Van der Waals Materials for Applications in Nanophotonics [49.66467977110429]
  We present an emerging class of layered van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5. We fabricate nanoantennas on SiO$$ and gold utilizing the compatibility of vdW thin films with a variety of substrates.
  arXiv  Detail & Related papers  (2022-08-12T12:57:14Z)
• Spatially entangled photon-pairs from lithium niobate nonlocal metasurfaces [2.4042647226715017]
  Multi-photon states that are entangled in spatial or angular domains are an essential resource for quantum imaging and sensing applications. We predict and demonstrate experimentally the generation of spatially entangled photon pairs through spontaneous parametric down-conversion. Results pave the way to miniaturization of various quantum devices by incorporating ultra-thin metasurfaces functioning as room-temperature sources of quantum-entangled photons.
  arXiv  Detail & Related papers  (2022-04-04T23:35:57Z)
• Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films [0.0]
  Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors. It shows that soft X-ray absorption can fingerprint magnetic impurities in these superconducting systems.
  arXiv  Detail & Related papers  (2021-11-23T00:33:38Z)
• TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators [48.7576911714538]
  Superconducting qubits have emerged as a potentially foundational platform technology. Material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin film and adjacent regions introduce noise and dissipate electromagnetic energy.
  arXiv  Detail & Related papers  (2021-08-30T22:22:47Z)
• High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2 [48.7576911714538]
  Integrating quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. Here, we develop an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond.
  arXiv  Detail & Related papers  (2020-04-07T16:43:46Z)
• Nitrogen-vacancy defect emission spectra in the vicinity of an adjustable silver mirror [62.997667081978825]
  Optical emitters of quantum radiation in the solid state are important building blocks for emerging technologies. We experimentally study the emission spectrum of an ensemble of nitrogen-vacancy defects implanted around 8nm below the planar diamond surface.
  arXiv  Detail & Related papers  (2020-03-31T10:43:26Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.