Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates
- URL: http://arxiv.org/abs/2408.01070v1
- Date: Fri, 2 Aug 2024 07:44:29 GMT
- Title: Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates
- Authors: Panaiot G. Zotev, Sam A. Randerson, Xuerong Hu, Yue Wang, Alexander I. Tartakovskii,
- Abstract summary: Transition metal dichalcogenide (TMD) single photon emitters offer numerous advantages to quantum information applications.
Traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate.
Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate.
- Score: 49.87501877273686
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Transition metal dichalcogenide (TMD) single photon emitters (SPEs) offer numerous advantages to quantum information applications, such as high single photon purity and deterministic positioning. Strain in the host monolayer, induced by underlying dielectric Mie resonators, is known to localize their formation to positions co-located with near-field photonic hotspots providing further control over their optical properties. However, traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate resulting in losses of the emitted light and limited photonic enhancement. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate due to the adhesive van der Waals forces, enabling high refractive index contrast or the use of highly reflective metallic surfaces. We demonstrate the localized formation of SPEs in WSe$_2$ monolayers transferred onto WS$_2$ NAs on both SiO$_2$ and Au substrates, enabling strong photonic enhancements and increased single photon collection. We provide evidence for enhanced quantum efficiencies (QE) reaching an average value of 43% (7%) for SPEs on WS$_2$ NAs on a SiO$_2$ (Au) substrate. We further combine the advantages offered by both dielectric and metallic substrates to numerically simulate an optimized NA geometry for maximum WSe$_2$ single photon excitation, emission, collection. Thus, the fluorescence is enhanced by a factor of over 4 orders of magnitude compared to vacuum and 5 orders of magnitude compared to a flat SiO$_2$/Si surface. Our work showcases the advantages offered by employing TMD material nanoresonators on various substrates for SPE formation and photonic enhancement.
Related papers
- Dielectric Fano Nanoantennas for Enabling Sub-Nanosecond Lifetimes in NV-based Single Photon Emitters [10.310350757094405]
Dielectric nanoantennas provide strong emission enhancement compared to plasmonic ones.
Interfaced emitters have a Purcell enhancement factor of 10, with sub-ns emission lifetime and a polarization contrast of 9.
arXiv Detail & Related papers (2024-07-03T11:15:59Z) - Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature.
We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs.
Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
arXiv Detail & Related papers (2024-05-03T23:02:30Z) - Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion
Implantation [70.64959705888512]
This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics.
We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation.
With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions.
arXiv Detail & Related papers (2024-01-26T03:50:33Z) - Highly photostable Zn-treated halide perovskite nanocrystals for
efficient single photon generation [0.0]
We fabricate and characterize in a systematic manner colloidal-treated $CsPbBr_3$ NCs obtained through $Zn2+$ ion doping at the Pb-site.
These doped NCs exhibit high single-photon purity, reduced blinking on a sub-millisecond timescale and stability of the bright state for excitation powers well above the saturation levels.
arXiv Detail & Related papers (2023-07-29T11:23:30Z) - Plasmon Enhanced Quantum Properties of Single Photon Emitters with
Hybrid Hexagonal Boron Nitride Silver Nanocube Systems [0.0]
Hexagonal boron nitride (hBN) has emerged as a promising ultrathin host of single photon emitters (SPEs)
We study the quantum single photon properties of hybrid nanophotonic structures composed of SPEs created in ultrathin hBN flakes and plasmonic silver nanocubes.
arXiv Detail & Related papers (2023-04-01T13:52:16Z) - Room Temperature Fiber-Coupled single-photon devices based on Colloidal
Quantum Dots and SiV centers in Back Excited Nanoantennas [91.6474995587871]
Directionality is achieved with a hybrid metal-dielectric bullseye antenna.
Back-excitation is permitted by placement of the emitter at or in a sub-wavelength hole positioned at the bullseye center.
arXiv Detail & Related papers (2023-03-19T14:54:56Z) - Van der Waals Materials for Applications in Nanophotonics [49.66467977110429]
We present an emerging class of layered van der Waals (vdW) crystals as a viable nanophotonics platform.
We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5.
We fabricate nanoantennas on SiO$$ and gold utilizing the compatibility of vdW thin films with a variety of substrates.
arXiv Detail & Related papers (2022-08-12T12:57:14Z) - Cavity-Enhanced 2D Material Quantum Emitters Deterministically
Integrated with Silicon Nitride Microresonators [0.3518016233072556]
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters.
We demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators.
arXiv Detail & Related papers (2022-06-29T18:16:38Z) - Room temperature single-photon emitters in silicon nitride [97.75917079876487]
We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates.
As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
arXiv Detail & Related papers (2021-04-16T14:20:11Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.