Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies
- URL: http://arxiv.org/abs/2501.11481v1
- Date: Mon, 20 Jan 2025 13:24:23 GMT
- Title: Nitrogen-Vacancy Centers in Epitaxial Laterally Overgrown Diamond: Towards Up-scaling of Color Center-based Quantum Technologies
- Authors: Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Roman Opaluch, Lahcene Mehmel, Riadh Issaoui, Alexandre Tallaire, Ovidiu Brinza, Jocelyn Achard, Elke Neu,
- Abstract summary: High-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications.
Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge.
- Score: 32.73124984242397
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- Abstract: Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g., via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of microseconds, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal strain in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.
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