Deterministic Creation of Strained Color Centers in Nanostructures via
High-Stress Thin Films
- URL: http://arxiv.org/abs/2309.07935v2
- Date: Sat, 4 Nov 2023 21:26:41 GMT
- Title: Deterministic Creation of Strained Color Centers in Nanostructures via
High-Stress Thin Films
- Authors: Daniel R. Assumpcao, Chang Jin, Madison Sutula, Sophie W. Ding, Phong
Pham, Can M. Knaut, Mihir K. Bhaskar, Abishrant Panday, Aaron M. Day, Dylan
Renaud, Mikhail D. Lukin, Evelyn Hu, Bartholomeus Machielse, Marko Loncar
- Abstract summary: In this work we combine high-stress silicon nitride thin films with diamond nanostructures in order to reproducibly create strained silicon-vacancy color centers.
Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within a measured sample at elevated temperatures (1.5K) without any degradation of their spin properties.
- Score: 0.5706164516481158
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Color centers have emerged as a leading qubit candidate for realizing hybrid
spin-photon quantum information technology. One major limitation of the
platform, however, is that the characteristics of individual color-centers are
often strain dependent. As an illustrative case, the silicon-vacancy center in
diamond typically requires millikelvin temperatures in order to achieve long
coherence properties, but strained silicon vacancy centers have been shown to
operate at temperatures beyond 1K without phonon-mediated decoherence. In this
work we combine high-stress silicon nitride thin films with diamond
nanostructures in order to reproducibly create statically strained
silicon-vacancy color centers (mean ground state splitting of 608 GHz) with
strain magnitudes of $\sim 4 \times 10^{-4}$. Based on modeling, this strain
should be sufficient to allow for operation of a majority silicon-vacancy
centers within the measured sample at elevated temperatures (1.5K) without any
degradation of their spin properties. This method offers a scalable approach to
fabricate high-temperature operation quantum memories. Beyond silicon-vacancy
centers, this method is sufficiently general that it can be easily extended to
other platforms as well.
Related papers
- Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds [6.576597801995822]
nitrogen-vacancy (NV) center in diamond has attracted much attention in the fields of quantum sensing, quantum simulation, and quantum networks.
In this work, we demonstrate a non-destructive method to fabricate optically coherent NV centers.
arXiv Detail & Related papers (2024-09-26T00:29:34Z) - Cavity-Enhanced Emission and Absorption of Color Centers in a Diamond Membrane With Selectable Strain [34.006376530375064]
Group IV color centers in diamond are among the most promising optically active spin systems.
We increase the ground-state splitting by up to an order of magnitude by induced strain in a single-crystal diamond membrane.
Together with the Purcell-enhanced twofold reduction in emitter lifetime below 1ns, this makes the system a promising spin-photon interface at moderate temperatures of 4K.
arXiv Detail & Related papers (2024-05-30T16:08:13Z) - Microwave-based quantum control and coherence protection of tin-vacancy
spin qubits in a strain-tuned diamond membrane heterostructure [54.501132156894435]
Tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K.
We introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes.
The presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223 $mu$s at 4 K.
arXiv Detail & Related papers (2023-07-21T21:40:21Z) - Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at
Low Temperatures [97.5153823429076]
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established.
These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform.
arXiv Detail & Related papers (2023-01-25T19:53:56Z) - Microscopic study of optically-stable, coherent color centers in diamond
generated by high-temperature annealing [6.8606674775322185]
Single color centers in solid have emerged as promising physical platforms for quantum information science.
We propose and demonstrate a distinct high-temperature annealing (HTA) approach for creating high-quality nitrogen vacancy (NV) centers in implantation-free diamonds.
arXiv Detail & Related papers (2022-08-20T14:20:19Z) - Tunable and Transferable Diamond Membranes for Integrated Quantum
Technologies [48.634695885442504]
nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth.
Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz.
This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.
arXiv Detail & Related papers (2021-09-23T17:18:39Z) - TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting
Resonators [48.7576911714538]
Superconducting qubits have emerged as a potentially foundational platform technology.
Material quality and interfacial structures continue to curb device performance.
Two-level system defects in the thin film and adjacent regions introduce noise and dissipate electromagnetic energy.
arXiv Detail & Related papers (2021-08-30T22:22:47Z) - Prolonged orbital relaxation by locally modified phonon density of
states for SiV$^-$ center in nanodiamonds [45.82374977939355]
Coherent quantum systems are a key resource for emerging quantum technology.
A novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states.
arXiv Detail & Related papers (2021-07-30T14:14:26Z) - A multiconfigurational study of the negatively charged nitrogen-vacancy
center in diamond [55.58269472099399]
Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications.
Here we show that unlike single-particle treatments, the multiconfigurational quantum chemistry methods, traditionally reserved for atoms/molecules, accurately describe the many-body characteristics of the electronic states of these defect centers.
arXiv Detail & Related papers (2020-08-24T01:49:54Z) - Purcell enhancement of a single silicon carbide color center with
coherent spin control [0.0]
We present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity.
We demonstrate coherent control of the divacancy ground state spin inside the cavity nanostructure.
This spin-cavity system represents an advance towards scalable long-distance entanglement protocols.
arXiv Detail & Related papers (2020-02-28T19:54:24Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.