Kolmogorov-Arnold Network for Transistor Compact Modeling

• URL: http://arxiv.org/abs/2503.15209v1
• Date: Wed, 19 Mar 2025 13:49:50 GMT
• Title: Kolmogorov-Arnold Network for Transistor Compact Modeling
• Abstract summary: NN-based transistor compact modeling has emerged as a transformative solution for accelerating device modeling and SPICE circuit simulations.<n>This work introduces for the first time, a groundbreaking NN architecture that seamlessly integrates interpretability with high precision in physics-based function modeling.<n>Our results reveal that KAN and FKAN consistently achieve superior prediction accuracy for critical figures of merit, including gate current drain charge, and source charge.
• Score: 7.87021540115765
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Neural network (NN)-based transistor compact modeling has recently emerged as a transformative solution for accelerating device modeling and SPICE circuit simulations. However, conventional NN architectures, despite their widespread adoption in state-of-the-art methods, primarily function as black-box problem solvers. This lack of interpretability significantly limits their capacity to extract and convey meaningful insights into learned data patterns, posing a major barrier to their broader adoption in critical modeling tasks. This work introduces, for the first time, Kolmogorov-Arnold network (KAN) for the transistor - a groundbreaking NN architecture that seamlessly integrates interpretability with high precision in physics-based function modeling. We systematically evaluate the performance of KAN and Fourier KAN for FinFET compact modeling, benchmarking them against the golden industry-standard compact model and the widely used MLP architecture. Our results reveal that KAN and FKAN consistently achieve superior prediction accuracy for critical figures of merit, including gate current, drain charge, and source charge. Furthermore, we demonstrate and improve the unique ability of KAN to derive symbolic formulas from learned data patterns - a capability that not only enhances interpretability but also facilitates in-depth transistor analysis and optimization. This work highlights the transformative potential of KAN in bridging the gap between interpretability and precision in NN-driven transistor compact modeling. By providing a robust and transparent approach to transistor modeling, KAN represents a pivotal advancement for the semiconductor industry as it navigates the challenges of advanced technology scaling.

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