Nitrogen-Vacancy Emission from Nanodiamonds: Size, Depth, and Surroundings
- URL: http://arxiv.org/abs/2508.08565v1
- Date: Tue, 12 Aug 2025 02:08:35 GMT
- Title: Nitrogen-Vacancy Emission from Nanodiamonds: Size, Depth, and Surroundings
- Authors: Harini Hapuarachchi, Francesco Campaioli, Jared H Cole, Andrew D Greentree, Qiang Sun,
- Abstract summary: negatively charged nitrogen-vacancy center in diamond is a leading solid-state quantum emitter.<n> embedding them in nanodiamonds introduces complexities from size, geometry, and surface effects.<n>We present a hybrid framework coupling rigorous electromagnetic simulations with a quantum-optical NV model.
- Score: 1.7857381140624573
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: The negatively charged nitrogen-vacancy (NV) center in diamond is a leading solid-state quantum emitter, offering spin-photon interfaces over a wide temperature range with applications from electromagnetic sensing to bioimaging. While NV centers in bulk diamond are well understood, embedding them in nanodiamonds (NDs) introduces complexities from size, geometry, and surface effects. NVs in NDs show altered fluorescence properties including longer lifetimes, lower quantum efficiency, and higher sensitivity to dielectric surroundings, which arise from radiative suppression, surface-induced non-radiative decay, and total internal reflection. Prior models typically addressed isolated aspects, such as dielectric contrast or surface quenching, without integrating full quantum-optical NV behavior with classical electrodynamics. We present a hybrid framework coupling rigorous electromagnetic simulations with a quantum-optical NV model including phonon sideband dynamics. NV emission is found to depend strongly on ND size, NV position, and surrounding refractive index. Our results explain observations such as shallow NVs in water-coated NDs appearing brighter than deeper ones in air and provide a unified framework for realistic emission scenarios. Unlike previous models, our approach predicts wavelength-dependent escape efficiencies and position-dependent variations. This integrated model informs the design of brighter NV-based sensors and quantum devices, advancing understanding of quantum emitter photophysics in nanoscale dielectrics.
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