Ultrafast Single Qubit Gates through Multi-Photon Transition Removal

• URL: http://arxiv.org/abs/2511.22365v1
• Date: Thu, 27 Nov 2025 12:04:18 GMT
• Title: Ultrafast Single Qubit Gates through Multi-Photon Transition Removal
• Authors: Y. Gao, A. Galicia, J. D. Da Costa Jesus, Y. Liu, Y. Haddad, D. A. Volkov, J. R. Guimarães, H. Bhardwaj, M. Jerger, M. Neis, B. Li, F. A. Cárdenas-López, F. Motzoi, P. A. Bushev, R. Barends,
• Abstract summary: Single qubit gates with a total leakage error consistently below $2.0times10-5$, and obtain fidelities above $99.98%$ for pulse durations down to 6.8 ns for both $X$ and $X/2$ gates.<n>We find that at such short gate durations and strong driving strengths the main error source is from higher order transitions.<n>This is all shown in the widely-used superconducting transmon qubit, which has a weakly anharmonic level structure and suffers from higher order transitions significantly.
• Score: 0.23191656838250044
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: One of the main enablers in quantum computing is having qubit control that is precise and fast. However, qubits typically have multilevel structures making them prone to unwanted transitions from fast gates. This leakage out of the computational subspace is especially detrimental to algorithms as it has been observed to cause long-lived errors, such as in quantum error correction. This forces a choice between either achieving fast gates or having low leakage. Previous works focus on suppressing leakage by mitigating the first to second excited state transition, overlooking multi-photon transitions, and achieving faster gates with further reductions in leakage has remained elusive. Here, we demonstrate single qubit gates with a total leakage error consistently below $2.0\times10^{-5}$, and obtain fidelities above $99.98\%$ for pulse durations down to 6.8 ns for both $X$ and $X/2$ gates. This is achieved by removing direct transitions beyond nearest-neighbor levels using a double recursive implementation of the Derivative Removal by Adiabatic Gate (DRAG) method, which we name the R2D method. Moreover, we find that at such short gate durations and strong driving strengths the main error source is from these higher order transitions. This is all shown in the widely-used superconducting transmon qubit, which has a weakly anharmonic level structure and suffers from higher order transitions significantly. We also introduce an approach for amplifying leakage error that can precisely quantify leakage rates below $10^{-6}$. The presented approach can be readily applied to other qubit types as well.

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