Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
- URL: http://arxiv.org/abs/2512.03970v1
- Date: Wed, 03 Dec 2025 17:02:07 GMT
- Title: Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
- Authors: Fraunié Jules, Mikhail M. Glazov, Sébastien Roux, Abraao Cefas Torres-Dias, Cora Crunteanu-Stanescu, Tom Fournier, Maryam S. Dehaghani, Tristan Clua-Provost, Delphine Lagarde, Laurent Lombez, Xavier Marie, Benjamin Lassagne, Thomas Poirier, James H. Edgar, Vincent Jacques, Cedric Robert,
- Abstract summary: Boron vacancies ($V_B-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors.<n>We investigate non-radiative Frster resonance energy transfer (FRET) between $V_B-$ centers and either monolayer graphene or 2D semiconductors.<n>Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B-$ centers for integration into ultra-thin quantum sensors.
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- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.
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