Gate-Tunable Giant Negative Magnetoresistance in Tellurene Driven by Quantum Geometry
- URL: http://arxiv.org/abs/2512.13413v1
- Date: Mon, 15 Dec 2025 15:02:53 GMT
- Title: Gate-Tunable Giant Negative Magnetoresistance in Tellurene Driven by Quantum Geometry
- Authors: Marcello B. Silva Neto, Chang Niu, Marcus V. O. Moutinho, Pierpaolo Fontana, Claudio Iacovelli, Victor Velasco, Caio Lewenkopf, Peide D. Ye,
- Abstract summary: We report the discovery of a giant negative magnetoresistance, reaching a remarkable $- 90%$ of the resistance at zero magnetic field.<n>Our findings establish a new, quantum geometric and non-Markovian memory effect in magnetotransport.
- Score: 2.633288841103114
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Negative magnetoresistance in conventional two-dimensional electron gases is a well-known phenomenon, but its origin in complex and topological materials, especially those endowed with quantum geometry, remains largely elusive. Here, we report the discovery of a giant negative magnetoresistance, reaching a remarkable $- 90\%$ of the resistance at zero magnetic field, $R_0$, in $n$-type tellurene films. This record-breaking effect persists over a wide magnetic field range (measured up to $35$ T) at cryogenic temperatures and is suppressed when the chemical potential shifts away from the Weyl node in the conduction band, strongly suggesting a quantum geometric origin. We propose two novel mechanisms for this phenomenon: a quantum geometric enhancement of diffusion and a magnetoelectric spin interaction that locks the spin of a Weyl fermion, in cyclotron motion under crossed electric $\boldsymbol{\cal E}$ and magnetic ${\bf B}$ fields, to its guiding-center drift, $(\boldsymbol{\cal E}\times{\bf B})\cdotσ$. We show that the time integral of the velocity auto-correlations promoted by the quantum metric between the spin-split conduction bands enhance diffusion, thereby reducing the resistance. This mechanism is experimentally confirmed by its unique magnetoelectric dependence, $ΔR_{zz}(\boldsymbol{\cal E},{\bf B})/R_0=-β_{g}(\boldsymbol{\cal E}\times{\bf B})^2$, with $β_{g}$ determined by the quantum metric. Our findings establish a new, quantum geometric and non-Markovian memory effect in magnetotransport, paving the way for controlling electronic transport in complex and topological matter.
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