Enhanced Superconducting Nanowire Single Photon Detector Performances using Silicon Capping

• URL: http://arxiv.org/abs/2602.15948v1
• Date: Tue, 17 Feb 2026 19:05:31 GMT
• Title: Enhanced Superconducting Nanowire Single Photon Detector Performances using Silicon Capping
• Authors: C. Klein, S. Cohen, T. Descamps, A. Iovan, P. Zolotov, P. Vennéguès, I. Florea, F. Semond, V. Zwiller,
• Abstract summary: Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range.<n>We study the influence of a Silicon capping layer on film properties and on the performance of SNSPDs.
• Score: 0.9480662172227127
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and performance degradation attributable to surface oxidation and lack of uniformity in films thinner than 5 nm remain a significant barrier for achieving high-quality detectors. In this work, we study the influence of a Silicon capping layer on film properties and on the performance of SNSPDs. A Silicon capping layer effectively suppresses oxidation and increases the superconducting transition temperature. This enables superconductivity in films as thin as 3 nm at 3 K, increases critical current in patterned nanowires and significantly extends the saturation plateau from the visible to the near infrared (up to 2050 nm): These detectors maintain sub-50 ps timing jitter, even for nanowires as wide as 250 nm and with detection areas of 20x20μm2. Our results establish that thinner films protected by a capping layer allow for the fabrication of wider wires, decreasing nanofabrication challenges and extending the operating temperature range for efficient single photon detection.

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