Related papers: Giant shift upon strain on the fluorescence spectrum of V$_{\rm N}$N$

Giant shift upon strain on the fluorescence spectrum of V$_{\rm N}$N$_{\rm B}$ color centers in $h$-BN

URL: http://arxiv.org/abs/2001.02749v2
Date: Sun, 16 Aug 2020 07:46:29 GMT
Title: Giant shift upon strain on the fluorescence spectrum of V$_{\rm N}$N$_{\rm B}$ color centers in $h$-BN
Authors: Song Li, Jyh-Pin Chou, Alice Hu, Martin B. Plenio, P\'eter Udvarhelyi, Gerg\H{o} Thiering, Mehdi Abdi, and Adam Gali
Abstract summary: We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride ($h$-BN) We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain.
Score: 4.721148947786637
License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
Abstract: We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride ($h$-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab-initio analysis we show that strong electron-phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of $h$-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.

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