Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

• URL: http://arxiv.org/abs/2005.00787v1
• Date: Sat, 2 May 2020 10:51:50 GMT
• Title: Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
• Authors: A. Hern\'andez-M\'inguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos and G. V. Astakhov
• Abstract summary: We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.

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